SBCW66GLT1G onsemi
Hersteller: onsemiDescription: TRANS NPN 45V 0.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
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Technische Details SBCW66GLT1G onsemi
Description: TRANS NPN 45V 0.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 300 mW, Qualification: AEC-Q101.
Weitere Produktangebote SBCW66GLT1G nach Preis ab 0.15 EUR bis 1.11 EUR
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SBCW66GLT1G | Hersteller : onsemi |
Description: TRANS NPN 45V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12256 Stücke: Lieferzeit 21-28 Tag (e) |
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SBCW66GLT1G | Hersteller : onsemi |
Bipolar Transistors - BJT SS GP XSTR NPN 45V |
auf Bestellung 12968 Stücke: Lieferzeit 14-28 Tag (e) |
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| SBCW66GLT1G | Hersteller : ONSEMI |
Description: ONSEMI - SBCW66GLT1G - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 876000 Stücke: Lieferzeit 14-21 Tag (e) |
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SBCW66GLT1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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SBCW66GLT1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 50...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |