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SCH2825-TL-E

SCH2825-TL-E onsemi

SCH2825.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A 6SCH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
auf Bestellung 620454 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2219+0.34 EUR
Mindestbestellmenge: 2219
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Technische Details SCH2825-TL-E onsemi

Description: MOSFET N-CH 30V 1.6A 6SCH, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 125°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 600mW (Ta), Supplier Device Package: 6-SCH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V.

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SCH2825-TL-E SCH2825-TL-E Hersteller : ONSEMI ONSMS35793-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - SCH2825-TL-E - SCH2825 - 30V, N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 622673 Stücke:
Lieferzeit 14-21 Tag (e)
SCH2825-TL-E SCH2825-TL-E Hersteller : onsemi SCH2825.pdf Description: MOSFET N-CH 30V 1.6A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Produkt ist nicht verfügbar
SCH2825-TL-E SCH2825-TL-E Hersteller : ON Semiconductor SCH2825-211445.pdf MOSFET NCH+SBD 4V DRIVE SERIES
Produkt ist nicht verfügbar