SCH2825-TL-E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A 6SCH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
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Technische Details SCH2825-TL-E onsemi
Description: MOSFET N-CH 30V 1.6A 6SCH, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 6-SCH, Power Dissipation (Max): 600mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta).
Weitere Produktangebote SCH2825-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCH2825-TL-E | onsemi |
Description: MOSFET N-CH 30V 1.6A 6SCH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 6-SCH Power Dissipation (Max): 600mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SCH2825-TL-E | ON Semiconductor |
MOSFET NCH+SBD 4V DRIVE SERIES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SCH2825-TL-E |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A 6SCH
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-SCH
Power Dissipation (Max): 600mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Description: MOSFET N-CH 30V 1.6A 6SCH
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-SCH
Power Dissipation (Max): 600mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCH2825-TL-E |
|
Hersteller: ON Semiconductor
MOSFET NCH+SBD 4V DRIVE SERIES
MOSFET NCH+SBD 4V DRIVE SERIES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH