SCS210AGC ROHM SEMICONDUCTOR


scs210ag-e.pdf Hersteller: ROHM SEMICONDUCTOR
SCS210AGC THT Schottky diodes
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Technische Details SCS210AGC ROHM SEMICONDUCTOR

Description: DIODE SIL CARB 650V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 365pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 600, Current - Reverse Leakage @ Vr: 200 µA @ 600 V, Reverse Recovery Time (trr): 0 ns, Voltage - DC Reverse (Vr) (Max): 650 V.

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SCS210AGC SCS210AGC Hersteller : Rohm Semiconductor scs210ag-e.pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
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SCS210AGC SCS210AGC Hersteller : ROHM Semiconductor scs210ag-e.pdf SiC Schottky Diodes DIODE: 10A 600V
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