SCS210AMC Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 650V 10A TO220FM
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.89 EUR |
50+ | 8.8 EUR |
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Technische Details SCS210AMC Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO220FM, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 365pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220FM, Operating Temperature - Junction: 175°C (Max), Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 600, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.
Weitere Produktangebote SCS210AMC nach Preis ab 6.5 EUR bis 13.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SCS210AMC | Hersteller : ROHM Semiconductor | Schottky Diodes & Rectifiers SiC Schottky Barrier Diode |
auf Bestellung 180 Stücke: Lieferzeit 14-28 Tag (e) |
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SCS210AMC | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 34W; TO220FP-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. load current: 28A Power dissipation: 34W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.55V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCS210AMC | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 34W; TO220FP-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. load current: 28A Power dissipation: 34W Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 1.55V |
Produkt ist nicht verfügbar |