
SCS210KGC Rohm Semiconductor

Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 1200 V
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 15.61 EUR |
50+ | 8.64 EUR |
100+ | 7.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCS210KGC Rohm Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Reverse Recovery Time (trr): 0 ns, Voltage - DC Reverse (Vr) (Max): 1200 V.
Weitere Produktangebote SCS210KGC
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
SCS210KGC | Hersteller : ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||
![]() |
SCS210KGC | Hersteller : ROHM Semiconductor |
![]() |
Produkt ist nicht verfügbar |