SCS210KGC

SCS210KGC Rohm Semiconductor


scs210kg-e.pdf Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 1200 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.61 EUR
50+8.64 EUR
100+7.97 EUR
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Technische Details SCS210KGC Rohm Semiconductor

Description: DIODE SIL CARB 1.2KV 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Reverse Recovery Time (trr): 0 ns, Voltage - DC Reverse (Vr) (Max): 1200 V.

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SCS210KGC Hersteller : ROHM SEMICONDUCTOR scs210kg-e.pdf SCS210KGC THT Schottky diodes
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SCS210KGC SCS210KGC Hersteller : ROHM Semiconductor scs210kg-e.pdf SiC Schottky Diodes DIODE: 10A 1200V
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