SCS212AGHRC Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220AC
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Preis |
|---|---|
| 2+ | 11.11 EUR |
| 10+ | 9.51 EUR |
| 100+ | 7.92 EUR |
| 500+ | 6.99 EUR |
| 1000+ | 6.29 EUR |
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Technische Details SCS212AGHRC Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220AC, Current - Reverse Leakage @ Vr: 240 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 438pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SCS212AGHRC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SCS212AGHRC | ROHM Semiconductor |
Schottky Diodes & Rectifiers 650V 12ASiC SBD AEC-Q101 Qualified |
auf Bestellung 3576 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SCS212AGHRC |
|
Hersteller: ROHM Semiconductor
Schottky Diodes & Rectifiers 650V 12ASiC SBD AEC-Q101 Qualified
Schottky Diodes & Rectifiers 650V 12ASiC SBD AEC-Q101 Qualified
auf Bestellung 3576 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH