SCS220AE2GC11 Rohm Semiconductor
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 9.38 EUR |
| 50+ | 8.01 EUR |
| 100+ | 7.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCS220AE2GC11 Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-247N, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.
Weitere Produktangebote SCS220AE2GC11 nach Preis ab 8.17 EUR bis 17.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCS220AE2GC11 | Hersteller : Rohm Semiconductor |
 Diode Schottky SiC 650V 20A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SCS220AE2GC11 | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen |
auf Bestellung 805 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SCS220AE2GC11 | Hersteller : Rohm Semiconductor |
Description: DIODE ARRAY SIC 650V 10A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SCS220AE2GC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W Semiconductor structure: common cathode; double Max. off-state voltage: 650V Load current: 10A x2 Case: TO247-3 Max. forward voltage: 1.63V Max. forward impulse current: 0.3kA Power dissipation: 160W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. load current: 91A Leakage current: 0.2mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
| SCS220AE2GC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W Semiconductor structure: common cathode; double Max. off-state voltage: 650V Load current: 10A x2 Case: TO247-3 Max. forward voltage: 1.63V Max. forward impulse current: 0.3kA Power dissipation: 160W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. load current: 91A Leakage current: 0.2mA |
Produkt ist nicht verfügbar |