SCS220AE2GC11 Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 15+ | 10.05 EUR |
| 25+ | 9.49 EUR |
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Technische Details SCS220AE2GC11 Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247N, Current - Reverse Leakage @ Vr: 200 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247N, Current - Average Rectified (Io) (per Diode): 10A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCS220AE2GC11 nach Preis ab 6.54 EUR bis 17.05 EUR
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SCS220AE2GC11 | Hersteller : Rohm Semiconductor |
 Diode Schottky SiC 650V 20A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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SCS220AE2GC11 | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen |
auf Bestellung 561 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS220AE2GC11 | Hersteller : Rohm Semiconductor |
Description: DIODE ARRAY SIC 650V 10A TO-247N Current - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-247N Current - Average Rectified (Io) (per Diode): 10A (DC) Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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