SCS220AEC ROHM Semiconductor

Description: DIODE SIL CARBIDE 650V 20A TO247, Current - Reverse Leakage @ Vr: 400 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.