SCS220AEC ROHM Semiconductor
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SCS220AEC ROHM Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A, Current - Reverse Leakage @ Vr: 400 µA @ 600 V.
Weitere Produktangebote SCS220AEC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SCS220AEC | Hersteller : ROHM SEMICONDUCTOR |
 SCS220AEC THT Schottky diodes |
Produkt ist nicht verfügbar |
||
 |
SCS220AEC | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
Produkt ist nicht verfügbar |