SCS304AHGC9 ROHM Semiconductor
auf Bestellung 717 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.4 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.22 EUR |
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Technische Details SCS304AHGC9 ROHM Semiconductor
Description: DIODE SIL CARB 650V 4A TO220ACP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 200pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220ACP, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote SCS304AHGC9 nach Preis ab 2.77 EUR bis 4.59 EUR
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SCS304AHGC9 | Hersteller : Rohm Semiconductor |
 Description: DIODE SIL CARB 650V 4A TO220ACPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
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