SCS304APC9 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: DIODE SILICON CARBIDE 650V 4A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 865 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 4.29 EUR |
| 50+ | 3.46 EUR |
| 100+ | 2.84 EUR |
| 500+ | 2.41 EUR |
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Technische Details SCS304APC9 Rohm Semiconductor
Description: DIODE SILICON CARBIDE 650V 4A, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 200pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote SCS304APC9 nach Preis ab 2.27 EUR bis 4.4 EUR
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SCS304APC9 | Hersteller : ROHM Semiconductor |
Schottky Diodes & Rectifiers 650V 3rd Gen SiC SBD 4A 6nC TO-220ACP |
auf Bestellung 707 Stücke: Lieferzeit 10-14 Tag (e) |
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