SCS310AGC16 ROHM Semiconductor
auf Bestellung 413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.94 EUR |
| 10+ | 6.67 EUR |
| 100+ | 5.40 EUR |
| 250+ | 5.10 EUR |
| 500+ | 4.80 EUR |
| 1000+ | 4.12 EUR |
| 2500+ | 3.87 EUR |
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Technische Details SCS310AGC16 ROHM Semiconductor
Description: DIODE SIL CARB 650V 10A TO220ACP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220ACFP, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote SCS310AGC16 nach Preis ab 3.75 EUR bis 9.77 EUR
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SCS310AGC16 | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARB 650V 10A TO220ACP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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