SCS312AGC16 ROHM Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 120-124 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.82 EUR |
| 10+ | 7.41 EUR |
| 100+ | 6.00 EUR |
| 250+ | 5.67 EUR |
| 500+ | 5.33 EUR |
| 1000+ | 4.56 EUR |
| 2500+ | 4.29 EUR |
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Technische Details SCS312AGC16 ROHM Semiconductor
Description: DIODE SIC 650V 12A TO220ACFP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 600pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220ACFP, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote SCS312AGC16
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SCS312AGC16 | Hersteller : Rohm Semiconductor |
 Description: DIODE SIC 650V 12A TO220ACFPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 600pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
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