SCS312AJTLL ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.9 EUR |
| 10+ | 7.77 EUR |
| 100+ | 6.2 EUR |
| 500+ | 6.07 EUR |
| 1000+ | 5.26 EUR |
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Technische Details SCS312AJTLL ROHM Semiconductor
Description: DIODE SIL CARBIDE 650V 12A LPTL, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 600pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: LPTL, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote SCS312AJTLL nach Preis ab 5.47 EUR bis 13.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SCS312AJTLL | Rohm Semiconductor |
 Description: DIODE SIL CARBIDE 650V 12A LPTLCurrent - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: LPTL Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 600pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 849 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCS312AJTLL |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 12A LPTL
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: LPTL
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 12A LPTL
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: LPTL
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 849 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.3 EUR |
| 10+ | 8.51 EUR |
| 100+ | 6.35 EUR |
| 500+ | 5.47 EUR |