SCS320AHGC9 Rohm Semiconductor
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 6.8 EUR |
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Technische Details SCS320AHGC9 Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220ACP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1000pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220ACP, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote SCS320AHGC9 nach Preis ab 8.15 EUR bis 17.17 EUR
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SCS320AHGC9 | Hersteller : ROHM Semiconductor |
 SiC Schottky Diodes 650V;20A;115W SiC SBD TO-220ACP |
auf Bestellung 1406 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS320AHGC9 | Hersteller : Rohm Semiconductor |
Rectifier Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220ACP Tube |
auf Bestellung 906 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCS320AHGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA Type of diode: Schottky rectifying Mounting: THT Case: TO220AC Max. off-state voltage: 650V Max. load current: 81A Max. forward voltage: 1.71V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 0.45kA Leakage current: 0.4mA Power dissipation: 115W Kind of package: tube Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCS320AHGC9 | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO220ACP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1000pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
Produkt ist nicht verfügbar |
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| SCS320AHGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA Type of diode: Schottky rectifying Mounting: THT Case: TO220AC Max. off-state voltage: 650V Max. load current: 81A Max. forward voltage: 1.71V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 0.45kA Leakage current: 0.4mA Power dissipation: 115W Kind of package: tube Technology: SiC |
Produkt ist nicht verfügbar |