SCS320AHGC9 Rohm Semiconductor
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 11.77 EUR |
| 25+ | 9.68 EUR |
| 100+ | 8.76 EUR |
| 250+ | 7.75 EUR |
| 500+ | 7.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCS320AHGC9 Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220ACP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1000pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220ACP, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote SCS320AHGC9 nach Preis ab 5.72 EUR bis 16.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCS320AHGC9 | Hersteller : Rohm Semiconductor |
 Rectifier Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220ACP Tube |
auf Bestellung 906 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SCS320AHGC9 | Hersteller : ROHM Semiconductor |
SiC Schottky Diodes 650V;20A;115W SiC SBD TO-220ACP |
auf Bestellung 1373 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SCS320AHGC9 | Hersteller : Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO220ACP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1000pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
Produkt ist nicht verfügbar |
|||||||||||||||
| SCS320AHGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.71V Max. load current: 81A Max. forward impulse current: 0.45kA Leakage current: 0.4mA Power dissipation: 115W Kind of package: tube |
Produkt ist nicht verfügbar |