SCT011HU75G3AG STMicroelectronics
Hersteller: STMicroelectronicsSiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 37.86 EUR |
| 10+ | 29.67 EUR |
| 100+ | 28.65 EUR |
| 600+ | 27.35 EUR |
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Technische Details SCT011HU75G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 80A, 18V, Power Dissipation (Max): 652W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT011HU75G3AG nach Preis ab 27.93 EUR bis 38.02 EUR
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SCT011HU75G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 80A, 18V Power Dissipation (Max): 652W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 424 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT011HU75G3AG | Hersteller : STMicroelectronics |
ST SiC Fet |
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| SCT011HU75G3AG | Hersteller : STMicroelectronics |
ST SiC Fet |
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| SCT011HU75G3AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 750V 110A |
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SCT011HU75G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 80A, 18V Power Dissipation (Max): 652W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |