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SCT012H90G3AG

SCT012H90G3AG STMicroelectronics

sct012h90g3ag.pdf
Hersteller: STMicroelectronics
Description: H2PAK-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: H2PAK-7
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.34 EUR
10+25.53 EUR
100+25.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SCT012H90G3AG STMicroelectronics

Description: H2PAK-7, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 4.2V @ 10mA, Power Dissipation (Max): 625W (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).

Weitere Produktangebote SCT012H90G3AG nach Preis ab 36.57 EUR bis 41.15 EUR

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SCT012H90G3AG Hersteller : STMicroelectronics sct012h90g3ag.pdf SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
auf Bestellung 100 Stücke:
Lieferzeit 234-238 Tag (e)
Anzahl Preis
1+41.15 EUR
10+36.57 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SCT012H90G3AG SCT012H90G3AG Hersteller : STMicroelectronics sct012h90g3ag.pdf Description: H2PAK-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: H2PAK-7
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH