SCT015W120G3-4AG STMicroelectronics
Hersteller: STMicroelectronics
Description: TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 60A, 18V
Power Dissipation (Max): 673W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3512 pF @ 800 V
Qualification: AEC-Q101
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Technische Details SCT015W120G3-4AG STMicroelectronics
Description: TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 129A (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 60A, 18V, Power Dissipation (Max): 673W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 10mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3512 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT015W120G3-4AG
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SCT015W120G3-4AG | Hersteller : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package |
Produkt ist nicht verfügbar |
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| SCT015W120G3-4AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 129A; Idm: 404A; 673W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 129A Pulsed drain current: 404A Power dissipation: 673W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 20mΩ Mounting: THT Gate charge: 167nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Application: automotive industry |
Produkt ist nicht verfügbar |