SCT018H65G3AG STMICROELECTRONICS
Hersteller: STMICROELECTRONICSDescription: STMICROELECTRONICS - SCT018H65G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 55 A, 650 V, 0.027 ohm, H2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 55A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.2V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 385W
Bauform - Transistor: H2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.027ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT018H65G3AG STMICROELECTRONICS
Description: H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 30A, 18V, Power Dissipation (Max): 385W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 79.4 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2124 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT018H65G3AG nach Preis ab 23.62 EUR bis 35.43 EUR
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SCT018H65G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT018H65G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 55 A, 650 V, 0.027 ohm, H2PAK tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT018H65G3AG | Hersteller : STMicroelectronics | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package |
auf Bestellung 100 Stücke: Lieferzeit 234-238 Tag (e) |
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SCT018H65G3AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 55A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R |
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| SCT018H65G3AG | Hersteller : STMicroelectronics | SCT018H65G3AG |
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| SCT018H65G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 55A; Idm: 312A; 385W; H2PAK7 Mounting: SMD Drain-source voltage: 650V Drain current: 55A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 385W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.4nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 312A Case: H2PAK7 Anzahl je Verpackung: 1 Stücke |
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SCT018H65G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 30A, 18V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2124 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SCT018H65G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 55A; Idm: 312A; 385W; H2PAK7 Mounting: SMD Drain-source voltage: 650V Drain current: 55A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 385W Polarisation: unipolar Kind of package: reel; tape Gate charge: 79.4nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 312A Case: H2PAK7 |
Produkt ist nicht verfügbar |