SCT018H65G3AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
| Anzahl | Preis |
|---|---|
| 1+ | 35.43 EUR |
| 10+ | 31.47 EUR |
| 25+ | 29.36 EUR |
| 50+ | 28.44 EUR |
| 100+ | 27.53 EUR |
| 250+ | 25.7 EUR |
| 500+ | 23.62 EUR |
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Technische Details SCT018H65G3AG STMicroelectronics
Description: H2PAK-7, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2124 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 79.4 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 4.2V @ 5mA, Power Dissipation (Max): 385W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 30A, 18V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
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SCT018H65G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2124 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 79.4 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: H2PAK-7 Vgs(th) (Max) @ Id: 4.2V @ 5mA Power Dissipation (Max): 385W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
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