SCT019HU120G3AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
| Anzahl | Preis |
|---|---|
| 1+ | 33.48 EUR |
| 10+ | 25.01 EUR |
| 100+ | 19.2 EUR |
| 600+ | 19.11 EUR |
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Technische Details SCT019HU120G3AG STMicroelectronics
Description: SIC MOSFET, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 10mA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 111.2 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2789 pF @ 800 V, Qualification: AEC-Q101.
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SCT019HU120G3AG | Hersteller : STMicroelectronics |
Description: SIC MOSFET Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 18V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 10mA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 111.2 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2789 pF @ 800 V Qualification: AEC-Q101 |
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