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SCT019HU120G3AG STMicroelectronics


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SCT019HU120G3AG
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Technische Details SCT019HU120G3AG STMicroelectronics

Description: SIC MOSFET, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 10mA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 111.2 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2789 pF @ 800 V, Qualification: AEC-Q101.

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SCT019HU120G3AG Hersteller : STMicroelectronics sct019hu120g3ag.pdf SCT019HU120G3AG
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SCT019HU120G3AG SCT019HU120G3AG Hersteller : STMicroelectronics sct019hu120g3ag.pdf Description: SIC MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 40A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: HU3PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 111.2 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2789 pF @ 800 V
Qualification: AEC-Q101
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SCT019HU120G3AG Hersteller : STMicroelectronics sct019hu120g3ag.pdf Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
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