SCT020HU120G3AG STMicroelectronics

Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: HU3PAK, Vgs(th) (Max) @ Id: 4.2V @ 2.3mA, Power Dissipation (Max): 555W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA.