SCT020HU120G3AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
| Anzahl | Preis |
|---|---|
| 1+ | 31.05 EUR |
| 10+ | 25.73 EUR |
| 100+ | 22.25 EUR |
| 600+ | 20.66 EUR |
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Technische Details SCT020HU120G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: HU3PAK, Vgs(th) (Max) @ Id: 4.2V @ 2.3mA, Power Dissipation (Max): 555W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA.
Weitere Produktangebote SCT020HU120G3AG nach Preis ab 16.8 EUR bis 16.8 EUR
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| SCT020HU120G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 100A; 555W; D2PAK-7 Technology: SiC Case: D2PAK-7 Kind of channel: enhancement Polarisation: N Type of transistor: N-MOSFET Mounting: SMD Gate-source voltage: 22V Gate charge: 121nC On-state resistance: 28mΩ Drain current: 100A Power dissipation: 555W Drain-source voltage: 1.2kV Application: automotive industry |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT020HU120G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Cut Tape (CT) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: HU3PAK Vgs(th) (Max) @ Id: 4.2V @ 2.3mA Power Dissipation (Max): 555W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Produkt ist nicht verfügbar |
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SCT020HU120G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: HU3PAK Vgs(th) (Max) @ Id: 4.2V @ 2.3mA Power Dissipation (Max): 555W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 18V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
Produkt ist nicht verfügbar |