SCT027H65G3AG STMicroelectronics
Hersteller: STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 39.3mOhm @ 30A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 5mA
Supplier Device Package: H2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1277 pF @ 400 V
Qualification: AEC-Q101
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Technische Details SCT027H65G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 39.3mOhm @ 30A, 18V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1277 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT027H65G3AG nach Preis ab 14.64 EUR bis 23.04 EUR
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SCT027H65G3AG | Hersteller : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package |
auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT027H65G3AG | Hersteller : STMicroelectronics |
SCT027H65G3AG |
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SCT027H65G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 39.3mOhm @ 30A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48.6 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1277 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |