SCT027W65G3-4AG STMicroelectronics

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 60A; Idm: 264A; 313W, Technology: SiC, Case: HIP247-4, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Polarisation: unipolar, Type of transistor: N-MOSFET, Kind of package: tube, Mounting: THT, Gate-source voltage: -10...22V, Gate charge: 51nC, On-state resistance: 39.3mΩ, Drain current: 60A, Pulsed drain current: 264A, Power dissipation: 313W, Drain-source voltage: 650V, Application: automotive industry.