SCT027W65G3-4AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.47 EUR |
| 10+ | 17.05 EUR |
| 100+ | 15.82 EUR |
| 600+ | 13.45 EUR |
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Technische Details SCT027W65G3-4AG STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 60A; Idm: 264A; 313W, Pulsed drain current: 264A, Power dissipation: 313W, Gate charge: 51nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 60A, Kind of channel: enhancement, Drain-source voltage: 650V, Application: automotive industry, Type of transistor: N-MOSFET, Gate-source voltage: -10...22V, Kind of package: tube, Case: HIP247-4, On-state resistance: 39.3mΩ, Mounting: THT.
Weitere Produktangebote SCT027W65G3-4AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SCT027W65G3-4AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 60A; Idm: 264A; 313W Pulsed drain current: 264A Power dissipation: 313W Gate charge: 51nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 60A Kind of channel: enhancement Drain-source voltage: 650V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: -10...22V Kind of package: tube Case: HIP247-4 On-state resistance: 39.3mΩ Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SCT027W65G3-4AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 60A; Idm: 264A; 313W
Pulsed drain current: 264A
Power dissipation: 313W
Gate charge: 51nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 650V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: tube
Case: HIP247-4
On-state resistance: 39.3mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 60A; Idm: 264A; 313W
Pulsed drain current: 264A
Power dissipation: 313W
Gate charge: 51nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 650V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: tube
Case: HIP247-4
On-state resistance: 39.3mΩ
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH