SCT027W65G3-4AG STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH SiC 650V 60A 4-Pin(4+Tab) HIP-247 Tube Automotive AEC-Q101
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Technische Details SCT027W65G3-4AG STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 264A; 313W; HIP247-4, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 60A, Pulsed drain current: 264A, Power dissipation: 313W, Case: HIP247-4, Gate-source voltage: -10...22V, On-state resistance: 39.3mΩ, Mounting: THT, Gate charge: 51nC, Kind of package: tube, Kind of channel: enhancement, Version: Automotive, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SCT027W65G3-4AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SCT027W65G3-4AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 264A; 313W; HIP247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 264A Power dissipation: 313W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 39.3mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Version: Automotive Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT027W65G3-4AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 264A; 313W; HIP247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 264A Power dissipation: 313W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 39.3mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Version: Automotive |
Produkt ist nicht verfügbar |