SCT027W65G3-4AG STMicroelectronics

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 60A; Idm: 264A; 313W, Pulsed drain current: 264A, Power dissipation: 313W, Gate charge: 51nC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 60A, Kind of channel: enhancement, Drain-source voltage: 650V, Application: automotive industry, Type of transistor: N-MOSFET, Gate-source voltage: -10...22V, Kind of package: tube, Case: HIP247-4, On-state resistance: 39.3mΩ, Mounting: THT.