SCT040H120G3AG STMicroelectronics
Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 40A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 40A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R
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Technische Details SCT040H120G3AG STMicroelectronics
Description: H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT040H120G3AG
Foto | Bezeichnung | Hersteller | Beschreibung |
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SCT040H120G3AG | Hersteller : STMicroelectronics | Trans MOSFET N-CH SiC 1.2KV 40A Automotive 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCT040H120G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCT040H120G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCT040H120G3AG | Hersteller : STMicroelectronics | MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A |
Produkt ist nicht verfügbar |
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SCT040H120G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |