SCT040H120G3AG STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 40A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R
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Technische Details SCT040H120G3AG STMicroelectronics
Description: H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT040H120G3AG
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| SCT040H120G3AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 40A Automotive 8-Pin(7+Tab) H2PAK T/R |
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| SCT040H120G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 156A; 300W; H2PAK7 Polarisation: unipolar Mounting: SMD Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 300W Kind of package: reel; tape Version: Automotive Gate charge: 54nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 156A Case: H2PAK7 Anzahl je Verpackung: 1 Stücke |
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SCT040H120G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V Qualification: AEC-Q101 |
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SCT040H120G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V Qualification: AEC-Q101 |
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| SCT040H120G3AG | Hersteller : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A |
Produkt ist nicht verfügbar |
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| SCT040H120G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 156A; 300W; H2PAK7 Polarisation: unipolar Mounting: SMD Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 300W Kind of package: reel; tape Version: Automotive Gate charge: 54nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 156A Case: H2PAK7 |
Produkt ist nicht verfügbar |