SCT040H120G3AG STMICROELECTRONICS
Hersteller: STMICROELECTRONICSDescription: STMICROELECTRONICS - SCT040H120G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 40 A, 1.2 kV, 0.054 ohm, H2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.2V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: H2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.054ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT040H120G3AG STMICROELECTRONICS
Description: H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT040H120G3AG
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SCT040H120G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT040H120G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 40 A, 1.2 kV, 0.054 ohm, H2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 300W Bauform - Transistor: H2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.054ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT040H120G3AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 40A Automotive AEC-Q101 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCT040H120G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCT040H120G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SCT040H120G3AG | Hersteller : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A |
Produkt ist nicht verfügbar |
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| SCT040H120G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 156A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Technology: SiC Gate-source voltage: -10...22V Gate charge: 54nC On-state resistance: 54mΩ Drain current: 40A Pulsed drain current: 156A Power dissipation: 300W Application: automotive industry Drain-source voltage: 1.2kV Kind of channel: enhancement Case: H2PAK7 Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |