SCT040HU120G3AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: AUTOMOTIVE-GRADE SILICON CARBIDE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 5mA
Supplier Device Package: HU3PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.04 EUR |
| 10+ | 18.65 EUR |
| 100+ | 18.12 EUR |
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Technische Details SCT040HU120G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT040HU120G3AG nach Preis ab 16.12 EUR bis 25.04 EUR
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SCT040HU120G3AG | Hersteller : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT040HU120G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT040HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 40 A, 1.2 kV, 0.049 ohm, HU3PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 300W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.049ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT040HU120G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT040HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 40 A, 1.2 kV, 0.049 ohm, HU3PAK tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT040HU120G3AG | Hersteller : STMicroelectronics |
SCT040HU120G3AG |
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SCT040HU120G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |