SCT040HU65G3AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
auf Bestellung 2 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 38.48 EUR |
10+ | 33.9 EUR |
25+ | 32.99 EUR |
50+ | 31.15 EUR |
100+ | 29.3 EUR |
250+ | 28.39 EUR |
600+ | 26.57 EUR |
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Technische Details SCT040HU65G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HU3PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT040HU65G3AG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SCT040HU65G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT040HU65G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 30 A, 650 V, 0.055 ohm, HU3PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 221W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.055ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT040HU65G3AG | Hersteller : STMicroelectronics | Trans MOSFET N-CH SiC 650V 30A Automotive AEC-Q101 8-Pin(7+Tab) HU3PAK T/R |
Produkt ist nicht verfügbar |
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SCT040HU65G3AG | Hersteller : STMicroelectronics | Trans MOSFET N-CH SiC 650V 30A Automotive 8-Pin(7+Tab) HU3PAK T/R |
Produkt ist nicht verfügbar |
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SCT040HU65G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCT040HU65G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCT040HU65G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCT040HU65G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |