SCT040W120G3AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.78 EUR |
| 10+ | 26.24 EUR |
| 100+ | 22.69 EUR |
| 250+ | 21.96 EUR |
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Technische Details SCT040W120G3AG STMicroelectronics
Description: HIP-247 IN LINE HEAT SINK 2MM, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 5mA, Supplier Device Package: HiP247™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT040W120G3AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCT040W120G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT040W120G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 40 A, 1.2 kV, 0.054 ohm, HiP247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 312W Bauform - Transistor: HiP247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 200°C Drain-Source-Durchgangswiderstand: 0.054ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT040W120G3AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W; HIP247™ Polarisation: unipolar Mounting: THT Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 312W Kind of package: tube Version: Automotive Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 179A Case: HIP247™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT040W120G3AG | Hersteller : STMicroelectronics |
Description: HIP-247 IN LINE HEAT SINK 2MM Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 5mA Supplier Device Package: HiP247™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SCT040W120G3AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 40A; Idm: 179A; 312W; HIP247™ Polarisation: unipolar Mounting: THT Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 312W Kind of package: tube Version: Automotive Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: -10...22V Pulsed drain current: 179A Case: HIP247™ |
Produkt ist nicht verfügbar |