SCT055HU65G3AG STMicroelectronics
Hersteller: STMicroelectronicsSiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
auf Bestellung 754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.22 EUR |
| 10+ | 16.88 EUR |
| 100+ | 14.57 EUR |
| 250+ | 14.13 EUR |
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Technische Details SCT055HU65G3AG STMicroelectronics
Description: AUTOMOTIVE-GRADE SILICON CARBIDE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V, Power Dissipation (Max): 185W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HU3PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT055HU65G3AG nach Preis ab 13.49 EUR bis 21.63 EUR
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SCT055HU65G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V Power Dissipation (Max): 185W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 452 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT055HU65G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT055HU65G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 30 A, 650 V, 0.072 ohm, HU3PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 185W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.072ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT055HU65G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT055HU65G3AG - Siliziumkarbid-MOSFET, Eins, n-Kanal, 30 A, 650 V, 0.072 ohm, HU3PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 185W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.072ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT055HU65G3AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 30A Automotive 8-Pin(7+Tab) HU3PAK T/R |
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| SCT055HU65G3AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 650V 30A Automotive 8-Pin(7+Tab) HU3PAK T/R |
Produkt ist nicht verfügbar |
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| SCT055HU65G3AG | Hersteller : STMicroelectronics |
SCT055HU65G3AG SMD N channel transistors |
Produkt ist nicht verfügbar |
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SCT055HU65G3AG | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE-GRADE SILICON CARBIDE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V Power Dissipation (Max): 185W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |