SCT055W65G3-4AG STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
| Anzahl | Preis |
|---|---|
| 1+ | 21.23 EUR |
| 10+ | 15.84 EUR |
| 100+ | 13.69 EUR |
| 600+ | 12.97 EUR |
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Technische Details SCT055W65G3-4AG STMicroelectronics
Description: TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 40 V, Qualification: AEC-Q101.
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SCT055W65G3-4AG | Hersteller : STMicroelectronics |
Description: TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 15A, 18V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 721 pF @ 40 V Qualification: AEC-Q101 |
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