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SCT070H120G3AG

SCT070H120G3AG STMicroelectronics


sct070h120g3ag.pdf Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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Technische Details SCT070H120G3AG STMicroelectronics

Description: H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.

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SCT070H120G3AG Hersteller : STMicroelectronics sct070h120g3ag.pdf SCT070H120G3AG SMD N channel transistors
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SCT070H120G3AG SCT070H120G3AG Hersteller : STMicroelectronics sct070h120g3ag.pdf Trans MOSFET N-CH SiC 1.2KV 30A Automotive 8-Pin(7+Tab) H2PAK T/R
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SCT070H120G3AG SCT070H120G3AG Hersteller : STMicroelectronics sct070h120g3ag.pdf Description: H2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: H2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SCT070H120G3AG SCT070H120G3AG Hersteller : STMicroelectronics sct070h120g3ag.pdf Description: H2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: H2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH