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SCT070H120G3AG

SCT070H120G3AG STMicroelectronics

sct070h120g3ag.pdf
Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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Lieferzeit 234-238 Tag (e)
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10+17.2 EUR
25+16.91 EUR
50+16.4 EUR
100+14.1 EUR
250+13.85 EUR
500+13.06 EUR
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Technische Details SCT070H120G3AG STMicroelectronics

Description: H2PAK-7, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: H2PAK-7, Vgs(th) (Max) @ Id: 4.2V @ 1mA, Power Dissipation (Max): 223W (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).

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SCT070H120G3AG SCT070H120G3AG Hersteller : STMicroelectronics sct070h120g3ag.pdf Description: H2PAK-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: H2PAK-7
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Power Dissipation (Max): 223W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT070H120G3AG SCT070H120G3AG Hersteller : STMicroelectronics sct070h120g3ag.pdf Description: H2PAK-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: H2PAK-7
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Power Dissipation (Max): 223W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH