SCT070H120G3AG STMicroelectronics
Hersteller: STMicroelectronicsSiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
auf Bestellung 100 Stücke:
Lieferzeit 234-238 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.37 EUR |
| 10+ | 17.2 EUR |
| 25+ | 16.91 EUR |
| 50+ | 16.4 EUR |
| 100+ | 14.1 EUR |
| 250+ | 13.85 EUR |
| 500+ | 13.06 EUR |
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Technische Details SCT070H120G3AG STMicroelectronics
Description: H2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: H2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT070H120G3AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCT070H120G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT070H120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 30 A, 1.2 kV, 0.087 ohm, H2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 223W Bauform - Transistor: H2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.087ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT070H120G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT070H120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 30 A, 1.2 kV, 0.087 ohm, H2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V euEccn: NLR Verlustleistung: 223W Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.087ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT070H120G3AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 30A Automotive 8-Pin(7+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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SCT070H120G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SCT070H120G3AG | Hersteller : STMicroelectronics |
Description: H2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: H2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SCT070H120G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 100A; 223W Type of transistor: N-MOSFET Kind of channel: enhancement Case: H2PAK7 Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 37nC On-state resistance: 87mΩ Drain current: 30A Pulsed drain current: 100A Power dissipation: 223W Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |