SCT070HU120G3AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: HU3PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: HU3PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.38 EUR |
| 10+ | 15.2 EUR |
| 100+ | 13.5 EUR |
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Technische Details SCT070HU120G3AG STMicroelectronics
Description: HU3PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT070HU120G3AG nach Preis ab 11.49 EUR bis 22.12 EUR
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SCT070HU120G3AG | Hersteller : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT070HU120G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT070HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 30 A, 1.2 kV, 0.087 ohm, HU3PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 223W Bauform - Transistor: HU3PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.087ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 404 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT070HU120G3AG | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT070HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 30 A, 1.2 kV, 0.087 ohm, HU3PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.2V euEccn: NLR Verlustleistung: 223W Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.087ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 404 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT070HU120G3AG | Hersteller : STMicroelectronics |
SCT070HU120G3AG |
Produkt ist nicht verfügbar |
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| SCT070HU120G3AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 30A Automotive 8-Pin(7+Tab) HU3PAK T/R |
Produkt ist nicht verfügbar |
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SCT070HU120G3AG | Hersteller : STMicroelectronics |
Description: HU3PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SCT070HU120G3AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 100A; 223W Type of transistor: N-MOSFET Kind of channel: enhancement Case: HU3PAK Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 37nC On-state resistance: 87mΩ Drain current: 30A Pulsed drain current: 100A Power dissipation: 223W Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |