SCT070HU120G3AG STMicroelectronics
Hersteller: STMicroelectronics
Description: HU3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: HU3PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 600+ | 10.33 EUR |
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Technische Details SCT070HU120G3AG STMicroelectronics
Description: HU3PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT070HU120G3AG nach Preis ab 11.67 EUR bis 21.86 EUR
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SCT070HU120G3AG | Hersteller : STMicroelectronics |
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT070HU120G3AG | Hersteller : STMicroelectronics |
Description: HU3PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HU3PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
auf Bestellung 736 Stücke: Lieferzeit 10-14 Tag (e) |
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