Produkte > STMICROELECTRONICS > SCT070HU120G3AG
SCT070HU120G3AG

SCT070HU120G3AG STMicroelectronics


sct070hu120g3ag.pdf Hersteller: STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
auf Bestellung 600 Stücke:

Lieferzeit 290-294 Tag (e)
Anzahl Preis
1+23.23 EUR
10+16.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SCT070HU120G3AG STMicroelectronics

Description: HU3PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 223W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HU3PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.

Weitere Produktangebote SCT070HU120G3AG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SCT070HU120G3AG SCT070HU120G3AG Hersteller : STMICROELECTRONICS sct070hu120g3ag.pdf Description: STMICROELECTRONICS - SCT070HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 30 A, 1.2 kV, 0.087 ohm, HU3PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.2V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 223W
Bauform - Transistor: HU3PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.087ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SCT070HU120G3AG SCT070HU120G3AG Hersteller : STMICROELECTRONICS sct070hu120g3ag.pdf Description: STMICROELECTRONICS - SCT070HU120G3AG - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 30 A, 1.2 kV, 0.087 ohm, HU3PAK
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SCT070HU120G3AG Hersteller : STMicroelectronics sct070hu120g3ag.pdf SCT070HU120G3AG
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT070HU120G3AG Hersteller : STMicroelectronics sct070hu120g3ag.pdf Trans MOSFET N-CH SiC 1.2KV 30A Automotive 8-Pin(7+Tab) HU3PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT070HU120G3AG Hersteller : STMicroelectronics sct070hu120g3ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; HU3PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: HU3PAK
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT070HU120G3AG SCT070HU120G3AG Hersteller : STMicroelectronics sct070hu120g3ag.pdf Description: HU3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: HU3PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT070HU120G3AG SCT070HU120G3AG Hersteller : STMicroelectronics sct070hu120g3ag.pdf Description: HU3PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: HU3PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SCT070HU120G3AG Hersteller : STMicroelectronics sct070hu120g3ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 100A; 223W; HU3PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 100A
Power dissipation: 223W
Case: HU3PAK
Gate-source voltage: -10...22V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH