SCT070W120G3-4AG STMicroelectronics
Hersteller: STMicroelectronicsSiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.32 EUR |
| 10+ | 18.66 EUR |
| 100+ | 16.56 EUR |
| 600+ | 14.13 EUR |
| 1200+ | 14.10 EUR |
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Technische Details SCT070W120G3-4AG STMicroelectronics
Description: TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 236W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT070W120G3-4AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SCT070W120G3-4AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 30A Automotive AEC-Q101 4-Pin(4+Tab) HIP-247 Tube |
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| SCT070W120G3-4AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 116A; 236W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 116A Power dissipation: 236W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 87mΩ Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement Version: Automotive Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCT070W120G3-4AG | Hersteller : STMicroelectronics |
Description: TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
| SCT070W120G3-4AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 30A; Idm: 116A; 236W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 116A Power dissipation: 236W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 87mΩ Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement Version: Automotive |
Produkt ist nicht verfügbar |