SCT070W120G3AG STMICROELECTRONICS
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - SCT070W120G3AG - SILICON CARBIDE POWER MOSFET
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
SVHC: No SVHC (21-Jan-2025)
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
| Anzahl | Privatkunde |
|---|---|
| 10+ | 26.11 EUR |
| 11+ | 22 EUR |
| 12+ | 18.23 EUR |
| 50+ | 16.73 EUR |
| 100+ | 15.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT070W120G3AG STMICROELECTRONICS
Description: SIC MOSFET, Vgs(th) (Max) @ Id: 4.2V @ 1mA, Power Dissipation (Max): 236W (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: HiP247™.
Weitere Produktangebote SCT070W120G3AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SCT070W120G3AG | STMicroelectronics |
Description: SIC MOSFET Vgs(th) (Max) @ Id: 4.2V @ 1mA Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: HiP247™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SCT070W120G3AG |
|
Hersteller: STMicroelectronics
Description: SIC MOSFET
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: HiP247™
Description: SIC MOSFET
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: HiP247™
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH