SCT070W120G3AG STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 9.61 EUR |
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Technische Details SCT070W120G3AG STMicroelectronics
Description: SIC MOSFET, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 236W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 1mA, Supplier Device Package: HiP247™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V, Qualification: AEC-Q101.
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SCT070W120G3AG | Hersteller : STMicroelectronics |
Description: SIC MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 1mA Supplier Device Package: HiP247™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Qualification: AEC-Q101 |
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