Technische Details SCT1000N170 STMicroelectronics
Description: STMICROELECTRONICS - SCT1000N170 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 7 A, 1.7 kV, 1 ohm, HiP247, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.7kV, rohsCompliant: YES, Dauer-Drainstrom Id: 7A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.5V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 96W, Bauform - Transistor: HiP247, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 20V, Betriebstemperatur, max.: 200°C, Drain-Source-Durchgangswiderstand: 1ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote SCT1000N170 nach Preis ab 6.46 EUR bis 21.06 EUR
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SCT1000N170 | STMicroelectronics |
 Trans MOSFET N-CH SiC 1.7KV 6A 3-Pin HIP-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT1000N170 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 7A; Idm: 20A; 96W Case: HIP247™ Mounting: THT Drain-source voltage: 1.7kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V Kind of package: tube On-state resistance: 1.3Ω Pulsed drain current: 20A Power dissipation: 96W Gate charge: 13.3nC Polarisation: unipolar Technology: SiC Drain current: 7A Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT1000N170 | STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package |
auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT1000N170 | STMicroelectronics |
Description: HIP247 IN LINE Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V Supplier Device Package: HiP247™ Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT1000N170 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT1000N170 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 7 A, 1.7 kV, 1 ohm, HiP247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 96W Bauform - Transistor: HiP247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 200°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT1000N170 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH SiC 1.7KV 6A 3-Pin HIP-247 Tube
Trans MOSFET N-CH SiC 1.7KV 6A 3-Pin HIP-247 Tube
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 600+ | 6.46 EUR |
| SCT1000N170 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 7A; Idm: 20A; 96W
Case: HIP247™
Mounting: THT
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: tube
On-state resistance: 1.3Ω
Pulsed drain current: 20A
Power dissipation: 96W
Gate charge: 13.3nC
Polarisation: unipolar
Technology: SiC
Drain current: 7A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 7A; Idm: 20A; 96W
Case: HIP247™
Mounting: THT
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: tube
On-state resistance: 1.3Ω
Pulsed drain current: 20A
Power dissipation: 96W
Gate charge: 13.3nC
Polarisation: unipolar
Technology: SiC
Drain current: 7A
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 11.25 EUR |
| 9+ | 9.82 EUR |
| SCT1000N170 |
|
Hersteller: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.01 EUR |
| 10+ | 10.95 EUR |
| 100+ | 8.1 EUR |
| SCT1000N170 |
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Hersteller: STMicroelectronics
Description: HIP247 IN LINE
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Description: HIP247 IN LINE
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.06 EUR |
| 10+ | 10.98 EUR |
| SCT1000N170 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - SCT1000N170 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 7 A, 1.7 kV, 1 ohm, HiP247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 96W
Bauform - Transistor: HiP247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 200°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - SCT1000N170 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 7 A, 1.7 kV, 1 ohm, HiP247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 96W
Bauform - Transistor: HiP247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 200°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 21.06 EUR |
| 13+ | 17.52 EUR |
| 50+ | 17.24 EUR |