SCT1000N170 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 7A; Idm: 20A; 96W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 7A
Pulsed drain current: 20A
Power dissipation: 96W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details SCT1000N170 STMicroelectronics
Description: HIP247 IN LINE, Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V, Supplier Device Package: HiP247™, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active.
Weitere Produktangebote SCT1000N170 nach Preis ab 8.1 EUR bis 16.06 EUR
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SCT1000N170 | STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package |
auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT1000N170 | STMicroelectronics |
Description: HIP247 IN LINE Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V Supplier Device Package: HiP247™ Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT1000N170 |
|
Hersteller: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.01 EUR |
| 10+ | 10.95 EUR |
| 100+ | 8.1 EUR |
| SCT1000N170 |
|
Hersteller: STMicroelectronics
Description: HIP247 IN LINE
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Description: HIP247 IN LINE
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V
Supplier Device Package: HiP247™
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.06 EUR |
| 10+ | 10.98 EUR |