SCT1000N170 STMicroelectronics
Hersteller: STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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Technische Details SCT1000N170 STMicroelectronics
Description: HIP247 IN LINE, Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V, Supplier Device Package: HiP247™, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active.
Weitere Produktangebote SCT1000N170 nach Preis ab 9.23 EUR bis 13.5 EUR
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SCT1000N170 | Hersteller : STMicroelectronics |
Description: HIP247 IN LINE Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 1000 V Supplier Device Package: HiP247™ Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 20V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 20 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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