SCT10N120 STMicroelectronics
Hersteller: STMicroelectronics
Description: SICFET N-CH 1200V 12A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V
Description: SICFET N-CH 1200V 12A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.5 EUR |
100+ | 11.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT10N120 STMicroelectronics
Description: SICFET N-CH 1200V 12A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V.
Weitere Produktangebote SCT10N120 nach Preis ab 14.95 EUR bis 26.36 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SCT10N120 | Hersteller : STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm |
auf Bestellung 4057 Stücke: Lieferzeit 689-703 Tag (e) |
|
|||||||||||||
SCT10N120 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - SCT10N120 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 12 A, 1.2 kV, 0.5 ohm, HiP247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 150W Bauform - Transistor: HiP247 Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 200°C Drain-Source-Durchgangswiderstand: 0.5ohm |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
SCT10N120 | Hersteller : STMicroelectronics | Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||
SCT10N120 | Hersteller : STMicroelectronics | Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||
SCT10N120 | Hersteller : STMicroelectronics | Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||
SCT10N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: THT Polarisation: unipolar Kind of package: tube Kind of channel: enhanced Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
SCT10N120 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: THT Polarisation: unipolar Kind of package: tube Kind of channel: enhanced Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |