SCT10N120AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: SICFET N-CH 1200V 12A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 539 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.13 EUR |
| 30+ | 6.86 EUR |
| 120+ | 6.74 EUR |
| 510+ | 6.38 EUR |
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Technische Details SCT10N120AG STMicroelectronics
Description: SICFET N-CH 1200V 12A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: HiP247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT10N120AG nach Preis ab 7.18 EUR bis 12.9 EUR
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