SCT20N120H STMicroelectronics
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 21.85 EUR |
| 10+ | 16.9 EUR |
| 25+ | 15.14 EUR |
| 50+ | 14.42 EUR |
| 100+ | 12.71 EUR |
| 250+ | 11.55 EUR |
| 500+ | 10.6 EUR |
| 1000+ | 10.04 EUR |
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Produktbewertung abgeben
Technische Details SCT20N120H STMicroelectronics
Description: SICFET N-CH 1200V 20A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 20V, Power Dissipation (Max): 175W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V.
Weitere Produktangebote SCT20N120H nach Preis ab 10.04 EUR bis 23.55 EUR
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SCT20N120H | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH SiC 1.2KV 20A 3-Pin(2+Tab) H2PAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT20N120H | Hersteller : STMicroelectronics |
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm |
auf Bestellung 409 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT20N120H | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 20A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 20V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V |
auf Bestellung 655 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT20N120H | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 20A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| SCT20N120H | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 20A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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| SCT20N120H | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; Idm: 45A; 150W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Pulsed drain current: 45A Power dissipation: 150W Case: H2PAK-2 On-state resistance: 239mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: -10...25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCT20N120H | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 20A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 20V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V |
Produkt ist nicht verfügbar |
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| SCT20N120H | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; Idm: 45A; 150W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Pulsed drain current: 45A Power dissipation: 150W Case: H2PAK-2 On-state resistance: 239mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: -10...25V |
Produkt ist nicht verfügbar |