SCT2160KEHRC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 7+ | 25.88 EUR |
| 25+ | 24.34 EUR |
| 50+ | 22.85 EUR |
| 100+ | 21.55 EUR |
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Technische Details SCT2160KEHRC11 Rohm Semiconductor
Description: 1200V, 22A, THD, SILICON-CARBIDE, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -6V, Drive Voltage (Max Rds On, Min Rds On): 18V, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCT2160KEHRC11 nach Preis ab 17.64 EUR bis 45.96 EUR
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SCT2160KEHRC11 | Rohm Semiconductor |
Description: 1200V, 22A, THD, SILICON-CARBIDE Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 4V @ 2.5mA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 374 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2160KEHRC11 | ROHM Semiconductor |
MOSFET 1200V, 22A, THD, Silicon-carbide (SiC) MOSFET |
auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2160KEHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2160KEHRC11 | ROHM |
Description: ROHM - SCT2160KEHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 22 A, 1.2 kV, 0.16 ohm, TO-247N tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 22A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 165W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.16ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT2160KEHRC11 |
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Hersteller: Rohm Semiconductor
Description: 1200V, 22A, THD, SILICON-CARBIDE
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: 1200V, 22A, THD, SILICON-CARBIDE
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.41 EUR |
| 30+ | 25.91 EUR |
| SCT2160KEHRC11 |
|
Hersteller: ROHM Semiconductor
MOSFET 1200V, 22A, THD, Silicon-carbide (SiC) MOSFET
MOSFET 1200V, 22A, THD, Silicon-carbide (SiC) MOSFET
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.61 EUR |
| 25+ | 27.14 EUR |
| SCT2160KEHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 30.61 EUR |
| 7+ | 24.7 EUR |
| 10+ | 23.1 EUR |
| 50+ | 20.33 EUR |
| 100+ | 18.55 EUR |
| 200+ | 17.64 EUR |
| SCT2160KEHRC11 |
|
Hersteller: ROHM
Description: ROHM - SCT2160KEHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 22 A, 1.2 kV, 0.16 ohm, TO-247N
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 22A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 165W
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.16ohm
SVHC: Lead (23-Jan-2024)
Description: ROHM - SCT2160KEHRC11 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 22 A, 1.2 kV, 0.16 ohm, TO-247N
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 22A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 165W
Bauform - Transistor: TO-247N
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.16ohm
SVHC: Lead (23-Jan-2024)
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 45.96 EUR |
| 7+ | 36.25 EUR |
| 10+ | 27.5 EUR |