SCT2280KEC ROHM Semiconductor
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.58 EUR |
| 10+ | 14.2 EUR |
| 25+ | 12.88 EUR |
| 100+ | 11.83 EUR |
| 250+ | 11.14 EUR |
| 360+ | 10.42 EUR |
| 1080+ | 9.38 EUR |
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Technische Details SCT2280KEC ROHM Semiconductor
Description: SICFET N-CH 1200V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V, Power Dissipation (Max): 108W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.4mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V.
Weitere Produktangebote SCT2280KEC
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCT2280KEC | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 1200V 14A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V Power Dissipation (Max): 108W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V |
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