SCT2280KEGC11 Rohm Semiconductor
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 11.95 EUR |
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Technische Details SCT2280KEGC11 Rohm Semiconductor
Description: 1200V, 14A, THD, SILICON-CARBIDE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V, Power Dissipation (Max): 108W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.4mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V.
Weitere Produktangebote SCT2280KEGC11 nach Preis ab 8.09 EUR bis 20.56 EUR
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SCT2280KEGC11 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 14A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2280KEGC11 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 14A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2280KEGC11 | Hersteller : Rohm Semiconductor |
Description: 1200V, 14A, THD, SILICON-CARBIDE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V Power Dissipation (Max): 108W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V |
auf Bestellung 2220 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2280KEGC11 | Hersteller : ROHM Semiconductor |
MOSFET 1200V 14A SIC |
auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT2280KEGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 14A On-state resistance: 364mΩ Type of transistor: N-MOSFET Power dissipation: 108W Kind of package: tube Case: TO247 Gate charge: 36nC Technology: SiC Kind of channel: enhanced Mounting: THT Gate-source voltage: -6...22V Pulsed drain current: 35A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT2280KEGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 14A On-state resistance: 364mΩ Type of transistor: N-MOSFET Power dissipation: 108W Kind of package: tube Case: TO247 Gate charge: 36nC Technology: SiC Kind of channel: enhanced Mounting: THT Gate-source voltage: -6...22V Pulsed drain current: 35A |
Produkt ist nicht verfügbar |