SCT2280KEHRC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.2KV 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 13.36 EUR |
14+ | 10.96 EUR |
50+ | 10.12 EUR |
100+ | 9.07 EUR |
200+ | 8.34 EUR |
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Technische Details SCT2280KEHRC11 Rohm Semiconductor
Description: 1200V, 14A, THD, SILICON-CARBIDE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V, Power Dissipation (Max): 108W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.4mA, Supplier Device Package: TO-247N, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 400 V, Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT2280KEHRC11 nach Preis ab 11.34 EUR bis 23.64 EUR
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SCT2280KEHRC11 | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2280KEHRC11 | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH SiC 1.2KV 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT2280KEHRC11 | Hersteller : Rohm Semiconductor |
Description: 1200V, 14A, THD, SILICON-CARBIDE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V Power Dissipation (Max): 108W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: TO-247N Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT2280KEHRC11 | Hersteller : ROHM Semiconductor | MOSFET 1200V, 14A, THD, Silicon-carbide (SiC) MOSFET |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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