SCT2450KEC ROHM - Japan
Hersteller: ROHM - JapanSiC-N-Ch 1200V 10A 85W 0,585R TO247 SCT2450KEC : Rohm SCT2450KEC TSCT2450kec
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 36.05 EUR |
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Technische Details SCT2450KEC ROHM - Japan
Description: SICFET N-CH 1200V 10A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 900µA, Supplier Device Package: TO-247, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V.
Weitere Produktangebote SCT2450KEC
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SCT2450KEC | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 7A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 85W Polarisation: unipolar Gate charge: 27nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 25A Mounting: THT Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SCT2450KEC | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 1200V 10A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 900µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V |
Produkt ist nicht verfügbar |
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SCT2450KEC | Hersteller : ROHM Semiconductor |
MOSFET 1200V 10A 450mOhm Silicon Carbide SiC |
Produkt ist nicht verfügbar |
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SCT2450KEC | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 7A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 85W Polarisation: unipolar Gate charge: 27nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 25A Mounting: THT Case: TO247 |
Produkt ist nicht verfügbar |