SCT2750NYTB

Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1700V 5.9A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 800 V

Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 1.7KV 5.9A 3-Pin(2+Tab) TO-268L T/R

Hersteller: ROHM Semiconductor
SiC MOSFETs N-Ch 1700V 6A 57W SiC Silicon Carbide

Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1700V 5.9A TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 975mOhm @ 1.7A, 18V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 630µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 800 V

Hersteller: ROHM
Description: ROHM - SCT2750NYTB - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 6A, 1.7kV, 0.75 Ohm, 18V, 2.8V
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 57W
Bauform - Transistor: TO-268 (D3PAK)
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.75ohm
SVHC: Lead (23-Jan-2024)

Hersteller: ROHM
Description: ROHM - SCT2750NYTB - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 6A, 1.7kV, 0.75 Ohm, 18V, 2.8V
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 57W
Bauform - Transistor: TO-268 (D3PAK)
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.75ohm
SVHC: Lead (23-Jan-2024)