SCT2H12NWBTL1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: SICFET N-CH 1700V 4A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: TO-263CA-7LSHYAD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 197 pF @ 800 V
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Technische Details SCT2H12NWBTL1 Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 410µA, Supplier Device Package: TO-263CA-7LSHYAD, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 197 pF @ 800 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SCT2H12NWBTL1 | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 1700V 4A TO268 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-263CA-7LSHYAD Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 197 pF @ 800 V |
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