SCT2H12NYTB Rohm Semiconductor
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 6.64 EUR |
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Technische Details SCT2H12NYTB Rohm Semiconductor
Description: SICFET N-CH 1700V 4A TO268, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 410µA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V.
Weitere Produktangebote SCT2H12NYTB nach Preis ab 5.24 EUR bis 10.45 EUR
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SCT2H12NYTB | Hersteller : ROHM Semiconductor |
 MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide |
auf Bestellung 668 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT2H12NYTB | Hersteller : ROHM SEMICONDUCTOR |
SCT2H12NYTB SMD N channel transistors |
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SCT2H12NYTB | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 1700V 4A TO268 Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V |
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SCT2H12NYTB | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 1700V 4A TO268 Packaging: Cut Tape (CT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V |
Produkt ist nicht verfügbar |