SCT3017ALGC11 Rohm Semiconductor

Description: 650V, 118A, THD, TRENCH-STRUCTUR, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V, Power Dissipation (Max): 427W, Vgs(th) (Max) @ Id: 5.6V @ 23.5mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V.