SCT3017ALHRC11 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 171.81 EUR |
| 25+ | 169.35 EUR |
| 50+ | 165.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3017ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 118A TO247N, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 23.5mA, Power Dissipation (Max): 427W, Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCT3017ALHRC11 nach Preis ab 132.23 EUR bis 216.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCT3017ALHRC11 | Rohm Semiconductor |
 Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
SCT3017ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
SCT3017ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 118A TO247N Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 23.5mA Power Dissipation (Max): 427W Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V Current - Continuous Drain (Id) @ 25°C: 118A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 1098 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
SCT3017ALHRC11 | ROHM Semiconductor |
SiC MOSFETs 650V 118A 427W SIC 17mOhm TO-247N |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT3017ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 171.81 EUR |
| 25+ | 169.35 EUR |
| SCT3017ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 175.24 EUR |
| 5+ | 164.59 EUR |
| 10+ | 147.6 EUR |
| 25+ | 137.14 EUR |
| 50+ | 132.23 EUR |
| SCT3017ALHRC11 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 118A TO247N
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Power Dissipation (Max): 427W
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 650V 118A TO247N
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Power Dissipation (Max): 427W
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 194.73 EUR |
| SCT3017ALHRC11 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs 650V 118A 427W SIC 17mOhm TO-247N
SiC MOSFETs 650V 118A 427W SIC 17mOhm TO-247N
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 216.52 EUR |
| 10+ | 188.83 EUR |