Technische Details SCT3017ALHRC11 ROHM Semiconductor
Description: SICFET N-CH 650V 118A TO247N, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 23.5mA, Power Dissipation (Max): 427W, Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCT3017ALHRC11 nach Preis ab 163.64 EUR bis 163.64 EUR
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SCT3017ALHRC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 650V 118A TO247NVoltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 23.5mA Power Dissipation (Max): 427W Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V Current - Continuous Drain (Id) @ 25°C: 118A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 1098 Stücke: Lieferzeit 10-14 Tag (e) |
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