SCT3017ALHRC11 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 175.76 EUR |
| 25+ | 173.24 EUR |
| 50+ | 168.84 EUR |
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Lieferzeit:
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Mindestmenge:
2 Stücke
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Technische Details SCT3017ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 118A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V, Power Dissipation (Max): 427W, Vgs(th) (Max) @ Id: 5.6V @ 23.5mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500, Qualification: AEC-Q101.
Weitere Produktangebote SCT3017ALHRC11 nach Preis ab 135.28 EUR bis 216.52 EUR
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SCT3017ALHRC11 | Rohm Semiconductor |
 Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3017ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3017ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 118A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 118A (Tc) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V Power Dissipation (Max): 427W Vgs(th) (Max) @ Id: 5.6V @ 23.5mA Supplier Device Package: TO-247N Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 Qualification: AEC-Q101 |
auf Bestellung 1098 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3017ALHRC11 | ROHM Semiconductor |
SiC MOSFETs 650V 118A 427W SIC 17mOhm TO-247N |
auf Bestellung 351 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT3017ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 175.76 EUR |
| 25+ | 173.24 EUR |
| SCT3017ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 118A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 179.26 EUR |
| 5+ | 168.37 EUR |
| 10+ | 150.99 EUR |
| 25+ | 140.29 EUR |
| 50+ | 135.28 EUR |
| SCT3017ALHRC11 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 118A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Qualification: AEC-Q101
Description: SICFET N-CH 650V 118A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Qualification: AEC-Q101
auf Bestellung 1098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 194.73 EUR |
| SCT3017ALHRC11 |
|
Hersteller: ROHM Semiconductor
SiC MOSFETs 650V 118A 427W SIC 17mOhm TO-247N
SiC MOSFETs 650V 118A 427W SIC 17mOhm TO-247N
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 216.52 EUR |
| 10+ | 207.51 EUR |