SCT3017ALHRC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 118A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Grade: Automotive
Qualification: AEC-Q101
Description: SICFET N-CH 650V 118A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
Power Dissipation (Max): 427W
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 195.92 EUR |
10+ | 181.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3017ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 118A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V, Power Dissipation (Max): 427W, Vgs(th) (Max) @ Id: 5.6V @ 23.5mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SCT3017ALHRC11 nach Preis ab 171.6 EUR bis 197.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SCT3017ALHRC11 | Hersteller : ROHM Semiconductor | MOSFET 650V 118A 427W SIC 17mOhm TO-247N |
auf Bestellung 392 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3017ALHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Mounting: THT On-state resistance: 22.1mΩ Type of transistor: N-MOSFET Power dissipation: 428W Polarisation: unipolar Kind of package: tube Gate charge: 172nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 295A Case: TO247 Drain-source voltage: 650V Drain current: 118A Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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SCT3017ALHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Mounting: THT On-state resistance: 22.1mΩ Type of transistor: N-MOSFET Power dissipation: 428W Polarisation: unipolar Kind of package: tube Gate charge: 172nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 295A Case: TO247 Drain-source voltage: 650V Drain current: 118A |
Produkt ist nicht verfügbar |