SCT3022ALHRC11 Rohm Semiconductor
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 66.75 EUR |
| 5+ | 60.74 EUR |
| 10+ | 51.92 EUR |
| 25+ | 47.99 EUR |
| 50+ | 41.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3022ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V, Power Dissipation (Max): 339W, Vgs(th) (Max) @ Id: 5.6V @ 18.2mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3022ALHRC11 nach Preis ab 60.32 EUR bis 113.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SCT3022ALHRC11 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SCT3022ALHRC11 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
SCT3022ALHRC11 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
SCT3022ALHRC11 | Hersteller : Rohm Semiconductor |
Description: SICFET N-CH 650V 93A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 339W Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 2246 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
| SCT3022ALHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||||
 |
SCT3022ALHRC11 | Hersteller : ROHM Semiconductor |
SiC MOSFETs 650V 93A 339W SIC 22mOhm TO-247N |
Produkt ist nicht verfügbar |
|||||||||||||||||||
| SCT3022ALHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |