SCT3022ALHRC11 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3+ | 80.36 EUR |
| 5+ | 74.76 EUR |
| 10+ | 64.9 EUR |
| 25+ | 61 EUR |
| 50+ | 54.25 EUR |
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Technische Details SCT3022ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247N, Vgs(th) (Max) @ Id: 5.6V @ 18.2mA, Power Dissipation (Max): 339W, Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SCT3022ALHRC11 nach Preis ab 82.51 EUR bis 135.61 EUR
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SCT3022ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3022ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3022ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
|
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SCT3022ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 93A TO247NQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247N Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Power Dissipation (Max): 339W Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 2246 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT3022ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 110.22 EUR |
| 3+ | 104.89 EUR |
| 5+ | 99.48 EUR |
| 10+ | 94.64 EUR |
| 20+ | 90.96 EUR |
| 50+ | 87.64 EUR |
| 100+ | 83.95 EUR |
| 250+ | 82.51 EUR |
| SCT3022ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 110.22 EUR |
| 3+ | 104.89 EUR |
| 5+ | 99.48 EUR |
| 10+ | 94.64 EUR |
| 20+ | 90.96 EUR |
| 50+ | 87.64 EUR |
| 100+ | 83.95 EUR |
| 250+ | 82.51 EUR |
| SCT3022ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 110.22 EUR |
| 3+ | 104.89 EUR |
| 5+ | 99.48 EUR |
| 10+ | 94.64 EUR |
| 20+ | 90.96 EUR |
| 50+ | 87.64 EUR |
| 100+ | 83.95 EUR |
| SCT3022ALHRC11 |
![]() |
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Power Dissipation (Max): 339W
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 650V 93A TO247N
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247N
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Power Dissipation (Max): 339W
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 2246 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 135.61 EUR |
| 30+ | 118.67 EUR |
| 120+ | 110.19 EUR |



