SCT3022ALHRC11 ROHM Semiconductor
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 113.1 EUR |
| 10+ | 107.76 EUR |
| 25+ | 98.42 EUR |
| 50+ | 97.68 EUR |
| 100+ | 93.23 EUR |
| 250+ | 92.35 EUR |
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Technische Details SCT3022ALHRC11 ROHM Semiconductor
Description: SICFET N-CH 650V 93A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V, Power Dissipation (Max): 339W, Vgs(th) (Max) @ Id: 5.6V @ 18.2mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3022ALHRC11 nach Preis ab 92.6 EUR bis 113.96 EUR
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SCT3022ALHRC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 650V 93A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 339W Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 2246 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3022ALHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Mounting: THT On-state resistance: 28.6mΩ Type of transistor: N-MOSFET Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 133nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 232A Case: TO247 Drain-source voltage: 650V Drain current: 93A Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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| SCT3022ALHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Mounting: THT On-state resistance: 28.6mΩ Type of transistor: N-MOSFET Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 133nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 232A Case: TO247 Drain-source voltage: 650V Drain current: 93A |
Produkt ist nicht verfügbar |