SCT3022ALHRC11 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3+ | 82.21 EUR |
| 5+ | 76.47 EUR |
| 10+ | 66.4 EUR |
| 25+ | 62.4 EUR |
| 50+ | 55.5 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3 Stücke
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Produktbewertung abgeben
Technische Details SCT3022ALHRC11 Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V, Power Dissipation (Max): 339W, Vgs(th) (Max) @ Id: 5.6V @ 18.2mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3022ALHRC11 nach Preis ab 84.41 EUR bis 135.61 EUR
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SCT3022ALHRC11 | Rohm Semiconductor |
 Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3022ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3022ALHRC11 | Rohm Semiconductor |
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
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SCT3022ALHRC11 | Rohm Semiconductor |
Description: SICFET N-CH 650V 93A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Power Dissipation (Max): 339W Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Supplier Device Package: TO-247N Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 2246 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SCT3022ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 112.75 EUR |
| 3+ | 107.3 EUR |
| 5+ | 101.77 EUR |
| 10+ | 96.82 EUR |
| 20+ | 93.06 EUR |
| 50+ | 89.67 EUR |
| 100+ | 85.88 EUR |
| 250+ | 84.41 EUR |
| SCT3022ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 112.75 EUR |
| 3+ | 107.3 EUR |
| 5+ | 101.77 EUR |
| 10+ | 96.82 EUR |
| 20+ | 93.06 EUR |
| 50+ | 89.67 EUR |
| 100+ | 85.88 EUR |
| 250+ | 84.41 EUR |
| SCT3022ALHRC11 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
Trans MOSFET N-CH SiC 650V 93A Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 112.75 EUR |
| 3+ | 107.3 EUR |
| 5+ | 101.77 EUR |
| 10+ | 96.82 EUR |
| 20+ | 93.06 EUR |
| 50+ | 89.67 EUR |
| 100+ | 85.88 EUR |
| SCT3022ALHRC11 |
|
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 650V 93A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Power Dissipation (Max): 339W
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 2246 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 135.61 EUR |
| 30+ | 118.67 EUR |
| 120+ | 110.19 EUR |