
SCT3030ALGC11 Rohm Semiconductor
auf Bestellung 1118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
5+ | 29.22 EUR |
10+ | 26.60 EUR |
50+ | 23.10 EUR |
100+ | 20.91 EUR |
200+ | 19.58 EUR |
900+ | 18.00 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SCT3030ALGC11 Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 262W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-247N, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500.
Weitere Produktangebote SCT3030ALGC11 nach Preis ab 26.20 EUR bis 41.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SCT3030ALGC11 | Hersteller : Rohm Semiconductor |
![]() |
auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
SCT3030ALGC11 | Hersteller : ROHM Semiconductor |
![]() |
auf Bestellung 516 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SCT3030ALGC11 | Hersteller : Rohm Semiconductor |
![]() |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
SCT3030ALGC11 | Hersteller : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247N Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
auf Bestellung 8797 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SCT3030ALGC11 | Hersteller : ROHM |
![]() tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 262W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 381 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
SCT3030ALGC11 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 262W Polarisation: unipolar Kind of package: tube Drain-source voltage: 650V Case: TO247 Gate charge: 104nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
SCT3030ALGC11 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W On-state resistance: 39mΩ Drain current: 70A Power dissipation: 262W Polarisation: unipolar Kind of package: tube Drain-source voltage: 650V Case: TO247 Gate charge: 104nC Mounting: THT Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Type of transistor: N-MOSFET Pulsed drain current: 175A |
Produkt ist nicht verfügbar |