SCT3030ALHRC11 ROHM Semiconductor
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 82.39 EUR |
| 10+ | 79.29 EUR |
| 25+ | 67.53 EUR |
| 50+ | 67.06 EUR |
| 100+ | 64.84 EUR |
| 250+ | 63.29 EUR |
| 450+ | 60.35 EUR |
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Technische Details SCT3030ALHRC11 ROHM Semiconductor
Description: SICFET N-CH 650V 70A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 262W, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-247N, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT3030ALHRC11 nach Preis ab 64.53 EUR bis 82.51 EUR
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SCT3030ALHRC11 | Hersteller : Rohm Semiconductor |
 Description: SICFET N-CH 650V 70A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247N Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 468 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT3030ALHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247 Drain-source voltage: 650V Drain current: 70A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT3030ALHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247 Drain-source voltage: 650V Drain current: 70A |
Produkt ist nicht verfügbar |