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SCT3030ARC15

SCT3030ARC15 Rohm Semiconductor

sct3030ar-e.pdf Hersteller: Rohm Semiconductor
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
auf Bestellung 361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.81 EUR
10+29.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SCT3030ARC15 Rohm Semiconductor

Description: 650V, 70A, 4-PIN THD, TRENCH-STR, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Power Dissipation (Max): 262W, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V.

Weitere Produktangebote SCT3030ARC15 nach Preis ab 27.02 EUR bis 33.09 EUR

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SCT3030ARC15 SCT3030ARC15 Hersteller : ROHM Semiconductor sct3030ar-e.pdf SiC MOSFETs TO247 650V 70A N-CH SIC
auf Bestellung 867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.09 EUR
10+29.39 EUR
25+27.42 EUR
50+27.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH