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SCT3030ARC15

SCT3030ARC15 Rohm Semiconductor

sct3030ar-e.pdf
Hersteller: Rohm Semiconductor
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.39 EUR
10+27.32 EUR
450+23.36 EUR
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Technische Details SCT3030ARC15 Rohm Semiconductor

Description: 650V, 70A, 4-PIN THD, TRENCH-STR, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Power Dissipation (Max): 262W, Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc).

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SCT3030ARC15 SCT3030ARC15 Hersteller : ROHM Semiconductor sct3030ar-e.pdf SiC MOSFETs TO247 650V 70A N-CH SIC
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